ipb50n10s3l-16 ipi50n10s3l-16, IPP50N10S3L-16 optimos ? -t power-transistor features ? n-channel - enhancement mode ? automotive aec q101 qualified ? msl1 up to 260c peak reflow ? 175c operating temperature ? green product (rohs compliant) ? 100% avalanche tested maximum ratings, at t j =25 c, unless otherwise specified parameter symbol conditions unit continuous drain current i d t c =25 c, v gs =10 v 50 a t c =100 c, v gs =10 v 1) 37 pulsed drain current 1) i d,pulse t c =25 c 200 avalanche energy, single pulse 1) e as i d =25a 330 mj avalanche current, single pulse i as 50 a gate source voltage 2) v gs 20 v power dissipation p tot t c =25 c 100 w operating and storage temperature t j , t stg -55 ... +175 c iec climatic category; din iec 68-1 55/175/56 value v ds 100 v r ds(on),max (smd version) 15.4 m ? i d 50 a product summary pg-to220-3-1 pg-to262-3-1 pg-to263-3-2 type package marking ipb50n10s3l-16 pg-to263-3-2 3n10l16 ipi50n10s3l-16 pg-to262-3-1 3n10l16 IPP50N10S3L-16 pg-to220-3-1 3n10l16 rev. 1.1 page 1 2008-04-09
ipb50n10s3l-16 ipi50n10s3l-16, IPP50N10S3L-16 parameter symbol conditions unit min. typ. max. thermal characteristics 1) thermal resistance, junction - case r thjc - - 1.5 k/w thermal resistance, junction - ambient, leaded r thja --62 smd version, device on pcb r thja minimal footprint - - 62 6 cm 2 cooling area 3) --40 electrical characteristics, at t j =25 c, unless otherwise specified static characteristics drain-source breakdown voltage v (br)dss v gs =0 v, i d = 1 ma 100 - - v gate threshold voltage v gs(th) v ds = v gs , i d =60a 1.2 1.7 2.4 zero gate voltage drain current i dss v ds =80 v, v gs =0 v, t j =25 c - 0.01 1 a v ds =80 v, v gs =0 v, t j =125 c 2) - 1 100 gate-source leakage current i gss v gs =16v, v ds =0v - - 100 na drain-source on-state resistance r ds(on) v gs =4.5v, i d =50a - 16.1 20.9 m ? v gs =4.5v, i d =50a, smd version - 15.8 20.6 v gs =10 v, i d =50 a - 13.1 15.7 v gs =10 v, i d =50 a, smd version - 12.8 15.4 values rev. 1.1 page 2 2008-04-09
ipb50n10s3l-16 ipi50n10s3l-16, IPP50N10S3L-16 parameter symbol conditions unit min. typ. max. d y namic characteristics 1) input capacitance c iss - 3215 4180 pf output capacitance c oss - 730 949 reverse transfer capacitance c rss -6395 turn-on delay time t d(on) -10-ns rise time t r -5- turn-off delay time t d(off) -28- fall time t f -5- gate char g e characteristics 1) gate to source charge q gs - 9 12 nc gate to drain charge q gd -812 gate charge total q g -4964 gate plateau voltage v plateau - 3.7 - v reverse diode diode continous forward current 1) i s - - 50 a diode pulse current 1) i s,pulse - - 200 diode forward voltage v sd v gs =0 v, i f =50 a, t j =25 c 0.6 1 1.2 v reverse recovery time 1) t rr v r =50v, i f = i s , d i f /d t =100a/s -80-ns reverse recovery charge 1) q rr - 185 - nc t c =25c values v gs =0v, v ds =25v, f =1mhz v dd =20 v, v gs =10 v, i d =50 a, r g =3.5 ? v dd =80 v, i d =70 a, v gs =0 to 10 v 1) defined by design. not subject to production test. 3) device on 40 mm x 40 mm x 1.5 mm epoxy pcb fr4 with 6 cm2 (one layer, 70 m thick) copper area for drain connection. pcb is vertical in still air. 2) qualified with v gs = +20/-5v. rev. 1.1 page 3 2008-04-09
ipb50n10s3l-16 ipi50n10s3l-16, IPP50N10S3L-16 1 power dissipation 2 drain current p tot = f( t c ); v gs 6 v i d = f( t c ); v gs 6 v; smd 3 safe operating area 4 max. transient thermal impedance i d = f( v ds ); t c = 25 c; d = 0; smd z thjc = f( t p ) parameter: t p parameter: d = t p / t 1 s 10 s 100 s 1 ms 1 10 100 1000 0.1 1 10 100 v ds [v] i d [a] single pulse 0.01 0.05 0.1 0.5 10 0 10 -1 10 -2 10 -3 10 -4 10 -5 10 -6 10 1 10 0 10 -1 10 -2 10 -3 t p [s] z thjc [k/w] 0 20 40 60 80 100 120 0 50 100 150 200 t c [c] p tot [w] 0 10 20 30 40 50 60 0 50 100 150 200 t c [c] i d [a] rev. 1.1 page 4 2008-04-09
ipb50n10s3l-16 ipi50n10s3l-16, IPP50N10S3L-16 5 typ. output characteristics 6 typ. drain-source on-state resistance i d = f( v ds ); t j = 25 c; smd r ds(on) = f( i d ); t j = 25 c; smd parameter: v gs parameter: v gs 7 typ. transfer characteristics 8 typ. drain-source on-state resistance i d = f( v gs ); v ds = 6v r ds(on) = f( t j ); i d = 50 a; v gs = 10 v; smd parameter: t j 5 10 15 20 25 30 -60 -20 20 60 100 140 180 t j [c] r ds(on) [m ? ] 3 v 3.5 v 4 v 4.5 v 5 v 10 v 0 20 40 60 80 100 120 140 160 180 200 012345 v ds [v] i d [a] 3 v 3.5 v 4 v 4.5 v 5 v 10 v 12 20 28 36 0 20406080100 i d [a] r ds(on) [m ? ] -55 c 25 c 175 c 0 50 100 150 12345 v gs [v] i d [a] rev. 1.1 page 5 2008-04-09
ipb50n10s3l-16 ipi50n10s3l-16, IPP50N10S3L-16 9 typ. gate threshold voltage 10 typ. capacitances v gs(th) = f( t j ); v gs = v ds c = f( v ds ); v gs = 0 v; f = 1 mhz parameter: i d 11 typical forward diode characteristicis 12 typ. avalanche characteristics if = f(v sd ) i a s = f( t av ) parameter: t j parameter: t j(start) 10 3 10 2 10 1 10 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 v sd [v] i f [a] 60 a 300 a 0 0.5 1 1.5 2 2.5 -60 -20 20 60 100 140 180 t j [c] v gs(th) [v] ciss coss crss 10 2 10 3 10 4 0 5 10 15 20 25 30 v ds [v] c [pf] 10 1 25 c 100 c 150 c 0.1 1 10 100 0.1 1 10 100 1000 t av [s] i av [a] 25 c 175 c 10 3 10 2 10 1 10 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 v sd [v] i f [a] rev. 1.1 page 6 2008-04-09
ipb50n10s3l-16 ipi50n10s3l-16, IPP50N10S3L-16 13 typical avalanche energy 14 typ. drain-source breakdown voltage e as = f( t j ) v br(dss) = f( t j ); i d = 1 ma parameter: i d 15 typ. gate charge 16 gate charge waveforms v gs = f( q gate ); i d = 50 a pulsed parameter: v dd v gs q gate v gs(th) q g(th) q gs q gd q sw q g 90 95 100 105 110 115 -55 -15 25 65 105 145 t j [c] v br(dss) [v] 20 v 80 v 0 1 2 3 4 5 6 7 8 9 10 0 10203040 q gate [nc] v gs [v] 50 a 25 a 12.5 a 0 100 200 300 400 500 600 25 75 125 175 t j [c] e as [mj] rev. 1.1 page 7 2008-04-09
ipb50n10s3l-16 ipi50n10s3l-16, IPP50N10S3L-16 published by infineon technologies ag 81726 munich, germany ? infineon technologies ag 2008 all rights reserved. legal disclaime r the information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. with respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, infineon technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non ? infringement of intellectual property rights of any third party. information for further information on technology, delivery terms and conditions and prices please contact your nearest infineon technologies office ( www.infineon.com ). warnings due to technical requirements components may contain dangerous substances. for information on the types in question please contact your nearest infineon technologies office. infineon technologies components may only be used in life-support devices or systems with the express written approval of infineon technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. if they fail, it is reasonable to assume that the health of the user or other persons may be endangered. rev. 1.1 page 8 2008-04-09
ipb50n10s3l-16 ipi50n10s3l-16, IPP50N10S3L-16 revision history version 1.1 1.1 1.1 date 08.04.2008 08.04.2008 09.04.2008 changes page 1: vgs changed from 16v to 20v page 3: footnote 2) added page 1: eas changed from 264mj to 330mj rev. 1.1 page 9 2008-04-09
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